About ST
Products
Applications
Support
Buy
News & Events
ST Worldwide
Contact Us
my.ST Login
Datasheets
|
Transistors
|
IGBTs
|
IGBTs, 600V
30 A, 600 V very fast IGBT
Datasheet
Format:
(342 kb)
or
(10 kb)
Last Updated: 12/03/2010
Pages: 14
Related Information
"Product information: ""V"" Series IGBT"
Additional Information: IGBTs FOR LIGHTING “S” series IGBTs for pre-heating ballast “S” series IGBTs for pre-heating ballast and light dimmer applications
IGBTs Product Page
STGW20NC60VD PSpice Model (.lib)
Related Press Releases
STMicroelectronics Introduces PowerMESH IGBTs for Switched-Mode Power Supplies
Raw Ascii Text
- (
Hide
)
(Unformatted textual content of the document used by search engines)
STGW20NC60VD
30 A, 600 V, very fast IGBT
Features
High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode
Description
This IGBT utilizes the advanced Power MESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior.
1
TO-247
2
3
Applications
High frequency inverters, UPS Motor drive SMPS and PFC in both hard switch and resonant topologies Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking GW20NC60VD Package TO-247 Packaging Tube
Order code STGW20NC60VD
March 2010
Doc ID 9983 Rev 5
1/14
www.st.com 14
Contents
STGW20NC 60VD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ... 7
3 4 5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
Doc ID 9983 Rev 5
STGW20NC60VD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC(1) IC (1) ICP (2) ICL(3) VGE IF IFSM PTOT Tj Tstg
Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at Tc= 25C Continuous collector current at Tc= 100C Pulsed collector current Turn-off latching current Gate-emitter voltage Diode RMS forward current at Tc=25C Surge not repetitive forward current tp = 10 ms sinusoidal Total dissipation at TC = 25C Operating junction temperature 55 to 150 Storage temperature C Value 600 60 30 150 100 20 30 120 200 Unit V A A A A V A A W
1. Calculated according to the iterative formula:
Tj ( m x ) T ---I C ( T C ) = -------------------------------------------------a---------------C-----------------------------------R t h j c × V C E ( s a t ) ( m a x ) ( T j ( m a x ), I C ( T C ) )
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. 3. Vclamp = 80 % VCES, TJ = 150 C, RG = 10 , VGE = 15 V.
Table 3.
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 0.63 1.5 50 Unit C/W C/W C/W
Doc ID 9983 Rev 5
3/14
Electrical characteristics
STGW20NC60VD
2
Electrical characteristics
(Tj =25C unless otherwise specified) Table 4.
Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES gfs
Static
Parameter Test conditions Min. 600 1.8 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S
Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) Collector-emitter saturation voltage Gate threshold voltage Collector-cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE=15 V, IC=20 A VGE=15 V, IC=20 A,Tj=125 C VCE= VGE, IC= 250 A VCE = 600 V VCE=600 V, Tj= 125 C VGE = 20V VCE = 15 V, IC= 20 A
5.75 250 1 100 15
Table 5.
Symbol Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2200 225 50 100 16 45 140 Max Unit pF pF pF nC nC nC
VCE = 25V, f = 1 MHz, VGE= 0
-
VCE = 390V, IC = 20A, VGE = 15V, (see Figure 18) -
4/14
Doc ID 9983 Rev 5
STGW20NC60VD
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC=390 V, IC= 20 A, RG=3.3 , VGE=15V (see Figure 17) VCC=390 V, IC= 20 A, RG=3.3 , VGE=15 V Tj=125C (see Figure 17) VCC=390 V, IC= 20 A, RG=3.3 , VGE=15 V (see Figure 17) VCC=390 V, IC= 20 A, RG=3.3 , VGE=15 V Tj=125C (see Figure 17) Min. Typ. 31 11 1600 31 11.5 1500 28 100 75 66 150 130 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns
-
-
-
-
Table 7.
Symbol Eon (1) Eoff Ets Eon (1) Eoff Ets
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC=390 V, IC= 20 A, RG=3.3 , VGE=15 V, (see Figure 19) VCC=390 V, IC= 20 A, RG=3.3 , VGE=15 V, Tj= 125C (see Figure 19) Min Typ. 220 330 550 450 770 1220 Ma x 300 450 750 Unit J J J J J J
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C).
Doc ID 9983 Rev 5
5/14
Electrical characteristics
STGW20NC60VD
Table 8.
Symbol VF t rr Q rr I rr m t rr Q rr I rr m
Collector-emitter diode
Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, Tj = 125C IF = 20 A, VR = 40 V, Tj = 25C, di/dt =100 A/s (see Figure 20) IF = 2 0A, VR = 40 V, Tj = 125C, di/dt =100 A/s (see Figure 20) Min Typ. 2 1.6 44 66 3 88 237 5.4 Max Unit V V ns nC A ns nC A
-
-
6/14
Doc ID 9983 Rev 5
STGW20NC60VD
Electrical characteristics
2.1
Figure 2.
Electrical characteristics (curves)
Output characteristics Figure 3. Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Collector-emitter on voltage vs collector current
Figure 7.
Normalized gate threshold vs temperature
Doc ID 9983 Rev 5
7/14
Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9.
STGW20NC60VD Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current
8/14
Doc ID 9983 Rev 5
STGW20NC60VD Figure 14. Thermal impedance
Electrical characteristics Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode characteristics
Doc ID 9983 Rev 5
9/14
Test circuits
STGW20NC 60VD
3
Test circuits
Figure 18. Gate charge test circuit
Figure 17. Test circuit for inductive load switching
Figure 19. Switching waveforms
Figure 20. Diode recovery times waveform
10/14
Doc ID 9983 Rev 5
STGW20NC60VD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Doc ID 9983 Rev 5
11/14
Package mechanical data
STGW20NC60VD
TO-247 mechanical data
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 3.55 4.50 5.50 14.20 3.70 18.50 3.65 5.50 mm. Min. 4. 85 2.20 1.0 2.0 3.0 0. 40 19.85 15.45 5.45 14.80 4.30 Typ. Max. 5.15 2.60 1.40 2.40 3 .40 0.80 20.15 15.75
12/14
Doc ID 9983 Rev 5
STGW20NC60VD
Revision history
5
Revision history
Table 9.
Date
Revision history
Revision Changes Stylesheet updated. Added switching losses maximum values inTable 7: Switching energy (inductive load). Inser ted Figure 20: Diode recovery times waveform. Inser ted IFSM parameter on Table 2: Absolute maximum ratings. Updated Figure 16: Emitter-collector diode characteristics and package mechanical data. Minor text changes to improve readability.
12-Jul-2004
4
09-Mar-2010
5
Doc ID 9983 Rev 5
13/14
STGW20NC60VD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
14/14
Doc ID 9983 Rev 5
Document Number: 9983
Untitled Document
Further Information
Contact
Online Support
(Registration Required)
(342 kb)
